TC1501 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 5 1w high linearity and high efficiency gaas power fets features 1w typical power at 6 ghz photo enlargement linear power gain: g l = 13 db typical at 6 ghz high linearity: ip3 = 40 dbm typical at 6 ghz high power added efficiency: nominal pae of 43% at 6 ghz via hole source ground suitable for high reliability application breakdown voltage: bv dgo 15 v lg = 0.35 m, wg = 2.4 mm tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1501 is a gaas pseudomorphic high electron mobility transistor (phemt) which has high linearity and high power added efficiency. the device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. the short gate length enables the device to be used in circuits up to 20ghz. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical application include commercial and military high performance power amplifiers. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6 ghz v ds = 8 v, i ds = 240 ma 29.5 30 dbm g l linear power gain, f = 6 ghz v ds = 8 v, i ds = 240 ma 12 13 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8 v, i ds = 240 ma,*p scl = 17 dbm 40 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 600 ma g m transconductance at v ds = 2 v, v gs = 0 v 400 ms v p pinch-off voltage at v ds = 2 v, i d = 4.8 ma -1.7** volts bv dgo drain-gate breakdown voltage at i dgo =1.2 ma 15 18 volts r th thermal resistance 12 c/w note: * p scl : output power of single carrier level. * *for the tight control of the pinch-off voltage . TC1501?s are divided into 3 groups: (1) TC1501p1519 : vp = -1.5v to -1.9v (2) TC1501p1620 : vp = -1.6v to -2.0v (3) TC1501p1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1501 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 5 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 28 dbm p t continuous dissipation 3.8 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions units: micrometers chip thickness: 50 gate pad: 79 x 59.5 drain pad: 86.0 x 76.0 chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. g g dd 600 12 470 12
TC1501 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 5 typical scattering parameters (t a =25 c ) v ds = 8 v, i ds = 240 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.04 0.01 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 6 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1501 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 5 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 0.05 0.99891 -11.249 22.18 173.81 0.0038131 84.101 0.20605 -13.841 0.1 0.99603 -22.286 21.835 167.74 0.0075079 78.333 0.20936 -27.208 0.2 0.98604 -43.003 20.603 156.38 0.014168 67.567 0.22045 -51.153 0.3 0.97335 -61.165 18.944 146.45 0.019538 58.24 0.23376 -70.488 0.4 0.96085 -76.492 17.175 138.1 0.023616 50.477 0.24626 -85.489 0.5 0.94996 -89.181 15.492 131.16 0.026624 44.136 0.25683 -96.998 0.6 0.94105 -99.625 13.98 125.41 0.028825 38.98 0.26545 -105.86 0.7 0.93396 -108.24 12.658 120.6 0.030443 34.77 0.27249 -112.74 0.8 0.92837 -115.4 11.516 116.54 0.031646 31.305 0.27834 -118.14 0.9 0.92397 -121.41 10.532 113.06 0.03255 28.425 0.28333 -122.42 1 0.92048 -126.49 9.6827 110.04 0.033239 26.007 0.28771 -125.84 1.1 0.91769 -130.84 8.9461 107.39 0.03377 23.955 0.29169 -128.61 1.2 0.91545 -134.59 8.3038 105.04 0.034182 22.199 0.29539 -130.85 1.3 0.91363 -137.85 7.7405 102.92 0.034505 20.683 0.29891 -132.68 1.4 0.91214 -140.71 7.2435 101 0.034758 19.364 0.30232 -134.18 1.5 0.91091 -143.24 6.8025 99.24 0.034957 18.208 0.30567 -135.42 1.6 0.90989 -145.49 6.4089 97.618 0.035113 17.19 0.30901 -136.44 1.7 0.90904 -147.5 6.0558 96.111 0.035234 16.288 0.31234 -137.28 1.8 0.90833 -149.32 5.7375 94.702 0.035326 15.485 0.3157 -137.97 1.9 0.90774 -150.96 5.4492 93.377 0.035395 14.767 0.3191 -138.54 2 0.90723 -152.45 5.187 92.124 0.035444 14.123 0.32254 -139.01 3 0.9040 -162.30 3.4748 81.52 0.0353 10.50 0.3571 -140.96 4 0.9041 -167.64 2.5798 73.64 0.0346 9.26 0.3983 -141.11 5 0.9051 -171.11 2.0300 66.87 0.0337 9.37 0.4415 -141.38 6 0.9065 -173.66 1.6573 60.79 0.0327 10.45 0.4843 -142.05 7 0.9081 -175.67 1.3879 55.24 0.0318 12.36 0.5254 -143.09 8 0.9098 -177.35 1.1843 50.12 0.0310 14.98 0.5638 -144.38 9 0.9115 -178.82 1.0254 45.38 0.0303 18.21 0.5993 -145.82 10 0.9131 179.85 0.8983 40.99 0.0300 21.90 0.6315 -147.36 11 0.9147 178.64 0.7947 36.92 0.0299 25.91 0.6606 -148.92 12 0.9161 177.50 0.7090 33.15 0.0302 30.04 0.6868 -150.48 13 0.9175 176.42 0.6371 29.65 0.0308 34.13 0.7103 -152.01 14 0.9188 175.40 0.5762 26.40 0.0317 38.03 0.7314 -153.49 15 0.9199 174.41 0.5241 23.40 0.0328 41.66 0.7502 -154.92 16 0.9210 173.45 0.4791 20.62 0.0342 44.95 0.7670 -156.30 17 0.9220 172.52 0.4400 18.05 0.0358 47.87 0.7821 -157.61 18 0.9229 171.61 0.4058 15.67 0.0376 50.43 0.7956 -158.87 * the data does not include gate, drain and source bond wires.
TC1501 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 5 / 5 cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid small signal model, v ds = 8 v, i ds = 240 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.039 nh rs 0.394 ohm rg 0.45 ohm ls 0.01 nh cgs 4.435 pf cds 0.536 pf ri 0.91 ohm rds 63.7 ohm cgd 0.181 pf rd 0.63 ohm gm 440.3 ms ld 0.008 nh t 3.9 psec large signal model, v ds = 8 v, i ds = 240 ma schemati tom2 model parameters vto -1.768 v vmax 0.5 v alpha 2.81 cgd 0.1805 pf beta 0.549 cgs 7.22 pf gamma 0.0173 cds 0.5364 pf delta 0.0818 ris 0.908 ohm q 0.96 rid 0.0001 ohm ng 0.1 vbr 15 v nd 0.01 rdb 46.517 ohm tau 3.9 ps cbs 9.6833 pf rg 0.454 ohm tnom 25 c rd 0.63 ohm ls 0.0101 nh rs 0.394 ohm lg 0.0391 nh is 1e-11 ma ld 0.008 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v
|
